bedzie pasował każdy P-MOSFET
o takich parametrach
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID −11
Drain current
Pulse (Note 1) IDP −44 A
Drain power dissipation (t = 10 s)
(Note 2a)
PD 1.9 W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 1.0 W
Single pulse avalanche energy
(Note 3)
EAS 157 mJ
Avalanche current IAR −11 A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR 0.19 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
manual
http://pdf1.alldatasheet.com/datasheet- ... C8108.htmli nie wierzę że Ci nic nie dobrali w tym elektronicznym